1. Product Scientific Research and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms organized in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting extraordinary atomic bond toughness.
The Si– C bond, with a bond energy of around 318 kJ/mol, is amongst the greatest in structural porcelains, giving outstanding thermal stability, firmness, and resistance to chemical assault.
This durable covalent network results in a material with a melting point surpassing 2700 Ā° C(sublimes), making it among the most refractory non-oxide ceramics available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels above 1400 Ā° C, where lots of metals and conventional porcelains begin to soften or deteriorate.
Its low coefficient of thermal expansion (~ 4.0 Ć 10 ā»ā¶/ K) integrated with high thermal conductivity (80– 120 W/(m Ā· K)) allows rapid thermal cycling without catastrophic splitting, an important quality for crucible efficiency.
These inherent homes stem from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise a highly steady and largely packed crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are typically fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in resilience and thermal shock resistance.
Sintered SiC crucibles are produced with solid-state or liquid-phase sintering at temperature levels over 2000 Ā° C, often with boron or carbon additives to boost densification and grain border communication.
This process generates a completely thick, fine-grained framework with very little porosity (
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